Synthesis and Study of Oxide Semiconductor Nanoheterostructures in SiO2/Si Track Template
Dauletbekova A. Junisbekova D. Baimukhanov Z. Kareiva A. Popov A.I. Platonenko A. Akilbekov A. Abdrakhmetova A. Aralbayeva G. Koishybayeva Z. Khamdamov J.
December 2024Multidisciplinary Digital Publishing Institute (MDPI)
Crystals
2024#14Issue 12
In this study, chemical deposition was used to synthesize structures of Ga2O3 -NW/SiO2/Si (NW—nanowire) at 348 K and SnO2-NW/SiO2/Si at 323 K in track templates SiO2/Si (either n- or p-type). The resulting crystalline nanowires were δ-Ga2O3 and orthorhombic SnO2. Computer modeling of the delta phase of gallium oxide yielded a lattice parameter of a = 9.287 Å, which closely matched the experimental range of 9.83–10.03 Å. The bandgap is indirect with an Eg = 5.5 eV. The photoluminescence spectra of both nanostructures exhibited a complex band when excited by light with λ = 5.16 eV, dominated by luminescence from vacancy-type defects. The current–voltage characteristics of δ-Ga2O3 NW/SiO2/Si-p showed one-way conductivity. This structure could be advantageous in devices where a reverse current is undesirable. The p-n junction with a complex structure was formed. This junction consists of a polycrystalline nanowire base exhibiting n-type conductivity and a monocrystalline Si substrate with p-type conductivity. The I–V characteristics of SnO2-NW/SiO2/Si suggested near-metallic conductivity due to the presence of metallic tin.
I–V characteristic , nanoheterostructure , orthorhombic SnO2 , oxide semiconductors , photoluminescence , track template SiO2/Si , δ-Ga2O3
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Department of Technical Physics, L.N. Gumilyov, Eurasian National University, Satpayev Str. 2, Astana, 010008, Kazakhstan
Faculty of Chemistry and Geosciences, University of Vilnius, Naugarduko Str. 24, Vilnius, LT-03225, Lithuania
Institute of Solid-State Physics, University of Latvia, Kengaraga 8, Riga, LV-1063, Latvia
Institute of Physics, University of Tartu, W. Ostwald Str. 1, Tartu, 50411, Estonia
Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Yangi Almazar Str., 20, Tashkent, 10005, Uzbekistan
Department of Technical Physics
Faculty of Chemistry and Geosciences
Institute of Solid-State Physics
Institute of Physics
Institute of Semiconductor Physics and Microelectronics
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