Improving the Strain Control Performance of MoS2 Monolayer to Develop Flexible Electronics
Chen W. Qiu Y. Babichuk I.S. Chang Y. Zhou R. He Z. Liu Y. Zhang J. Babichuk I.V. Tiutiunnyk A. Laroze D. Brus V.V. Yang J.
February 2024John Wiley and Sons Inc
Advanced Engineering Materials
2024#26Issue 3
In recent years, two-dimensional (2D) materials with unique mechanical, optical, and electrical properties have attracted extensive attention. In terms of mechanical properties, 2D molybdenum disulfide (MoS2) can perform larger strains than traditional semiconductor materials. In this contribution, the chemical vapor deposition technique to grow MoS2 films on a Si wafer and transfer them onto a flexible substrate is used. The controlled deformation of 2D MoS2 samples is realized by encapsulating them with a flexible acrylate film via successive spin-coating and photopolymerization. Improved strain control is achieved due to the perfect integration of different components (MoS2/substrate) and the high adhesion of polymers. This approach provides a better detection of the changing structure of the MoS2 monolayer on the flexible substrate during tensile. It is noted that the crystal symmetry damage caused by strain is reflected in the redshift of the characteristic bands of MoS2. Hence, an effective way for strain regulation of MoS2 for future applications in flexible devices is provided.
2D materials , flexible electronics , MoS2 , Raman , strain control
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Faculty of Intelligent Manufacturing, Wuyi University, Jiangmen, 529020, China
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv, 03680, Ukraine
Laboratory of Chemical, Biological and Earth Sciences, National Center “Minor academy of sciences of Ukraine”, Kyiv, 04119, Ukraine
Departamento de Física, FACI, Universidad de Tarapacá, Arica, Iquique, 1000000, Chile
Instituto de Alta Investigación, Universidad de Tarapacá, Iquique, Arica, 1000000, Chile
Department of Physics, School of Sciences and Humanities, Nazarbayev University, Astana, 010000, Kazakhstan
Faculty of Intelligent Manufacturing
V. Lashkaryov Institute of Semiconductor Physics
Laboratory of Chemical
Departamento de Física
Instituto de Alta Investigación
Department of Physics
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