Visible to Near-Infrared Photodiodes with Advanced Radiation Resistance
Brus V.V. Solovan M.M. Schopp N. Kaikanov M. Mostovyi A.I.
March 2022John Wiley and Sons Inc
Advanced Theory and Simulations
2022#5Issue 3
A new type of sub-micron metal-intrinsic semiconductor-metal visible to near-infrared (400–1600 nm) photodiodes based on a unique combination of radiation-resistant functional materials: sapphire, TiN, MoOx, CdTe, Hg3In2Te6, and graphite is proposed. The promising optoelectronic characteristics are calculated in the scope of a comprehensive semi-analytical model, based on the complementary fusion of numerical Transfer Matrix optical simulation with analytical Hecht and dark generation current equations. The findings demonstrate proof-of-concept next-generation high-performance optoelectronic devices with advanced radiation resistance. Moreover, a simple device engineering modification has revealed a significant optimization potential for considered photodiodes.
CdTe , MIT , optoelectronics , photodiode , radiation resistance
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Department of Physics, Nazarbayev University, Nur-Sultan City, 010000, Kazakhstan
Department of Electronics and Energy Engineering, Chernivtsi National University, Chernivtsi, 58000, Ukraine
Center for Polymers and Organic Solids, University of California Santa Barbara (UCSB), Santa Barbara, 93106, CA, United States
Department of Physics
Department of Electronics and Energy Engineering
Center for Polymers and Organic Solids
10 лет помогаем публиковать статьи Международный издатель
Книга Публикация научной статьи Волощук 2026 Book Publication of a scientific article 2026