Growing crystals and studying structure and electronic properties of Cu2ZnGe(SхSe1-x)4 compositions
Bodnar I.V. Khoroshko V.V. Yashchuk V.A. Gremenok V.F. Kazi M. Khandaker M.U. Abid A.G. Zubar T.I. Tishkevich D.I. Trukhanov A.V. Trukhanov S.V.
November 2023Elsevier Ltd
Heliyon
2023#9Issue 11
Single crystals of Cu2ZnGeSe4 and Cu2ZnGeS4 solid solutions were developed and successfully obtained using the chemical vapor transfer method, with iodine acting as a transporter. The structure, compositional dependences of lattice parameters, pycnometric and X-ray densities and microhardness were determined. The chemical composition determined by the X-ray microanalysis satisfactorily corresponds to the nominal one with a tolerance of ±5 %. The XRD analysis showed that all the obtained compounds and their solid solutions have unit cell described by tetragonal symmetry. The attice parameters were found to be а = 5.342 ± 0.005 Å, с = 10.51 ± 0.01 Å for the Сu2ZnGeS4 compound and а = 5.607 ± 0.005 Å, с = 11.04 ± 0.01 Å for the Cu2ZnGeSe4, respectively. Structural studies confirmed the validity of the Vegards law in relation to the obtained samples. The pycnometric densities of ∼4.28 g/cm3 for the Cu2ZnGeS4 and ∼5.46 g/cm3 for the Cu2ZnGeSe4 were found to be slightly less than their X-ray densities of ∼4.32 g/cm3 and ∼5.52 g/cm3, respectively. The maximum microhardness of ∼398 kg/mm2 for these solid solutions corresponds to x = 0.60. The melt point of the solid solutions increases from ∼1180 °C for the Сu2ZnGeSe4 up to ∼1400 °C for the Сu2ZnGeS4. Based on X-ray fluorescence analysis and DTA data, the phase diagram of the Cu2ZnGeSe4-Cu2ZnGeS4 system was constructed. Analysis of the obtained diagram indicates its first type according to Rozboms classification.
Chemical vapor transport method , Crystal structure , Microhardness , Single crystals , State diagram
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Belarussian State University of Informatics and Radioelectronics, P. Brovka str., 6, Minsk, 220013, Belarus
Laboratory of Magnetic Films Physics, SSPA “Scientific and Practical Materials Research Centre of NAS of Belarus”, P. Brovka str., 19, Minsk, 220072, Belarus
Department of Pharmaceutics, College of Pharmacy, POBOX-2457, King Saud University, Riyadh, 11451, Saudi Arabia
Centre for Applied Physics and Radiation Technologies, School of Engineering and Technology, Sunway University, Bandar Sunway, Selangor, 47500, Malaysia
Faculty of Graduate Studies, Daffodil International University, Daffodil Smart City, Birulia, Savar, Dhaka, 1216, Bangladesh
Institute of Chemical Sciences, Bahauddin Zakariya University, Multan, 60800, Pakistan
Smart Sensors Laboratory, Department of Electronic Materials Technology, National University of Science and Technology MISiS, Lenin Ave. 4/1, Moscow, 119049, Russian Federation
L.N. Gumilyov Eurasian National University, Astana, 010000, Kazakhstan
Belarussian State University of Informatics and Radioelectronics
Laboratory of Magnetic Films Physics
Department of Pharmaceutics
Centre for Applied Physics and Radiation Technologies
Faculty of Graduate Studies
Institute of Chemical Sciences
Smart Sensors Laboratory
L.N. Gumilyov Eurasian National University
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