InSe Crystals Obtained by Stoichiometric Fusion for Optoelectronic Device Application

Кристали InSe, отримані стехіометричним плавленням, для застосування в оптоелектронних пристроях
Aitzhanov M. Guseinov N. Nemkayeva R. Tolepov Zh. Prikhodko O. Mukhametkarimov Ye.
2021 Sumy State University

Journal of Nano- and Electronic Physics
2021 #13 Issue 5 1 - 5 pp.

Indium selenide (InSe) crystals have attracted great attention in recent years because of rather high carrier mobility and wide tunability of the band gap which gives an opportunity to produce highly sensitive optoelectronic devices based on them. In this contribution, layered InSe crystals were obtained using stoichiometric fusion method. Analysis of XRD spectra showed that InSe crystals obtained by this method have a hexagonal crystal structure with cell parameters a = b = 4.04 Ǻ, c = 16.64 Ǻ, which corresponds to β -InSe. The results of Raman studies are in good agreement with the results published elsewhere. The proposed synthesis method is easier and faster comparing to classical methods, like Bridgman-Stockbarger technique. At the same time, it allows to obtain samples of β -InSe of rather high quality to perform various laboratory experiments for prototype electronic devices. To prove this, photosensitivity of a planar metal-semiconductor-metal (MSM) photodetector based on synthesized β -InSe crystals was demonstrated. Gold contacts were used to create a back-to-back Schottky diode. Scanning photocurrent microscopy technique was used to investigate the local sensitivity of the produced MSM photodetector. Observations indicate the produced photodetector as highly sensitive to small changes in the position of the illuminated area.

Indium selenide , Metal-semiconductor-metal photodetector , Scanning photocurrent microscopy. , Schottky junction , Stoichiometric fusion method

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