Epitaxial Grown VO2 with Suppressed Hysteresis and Low Room Temperature Resistivity for High-Performance Thermal Sensor Applications
Ainabayev A. Mullarkey D. Walls B. Caffrey D. Zhussupbekov K. Zhussupbekova A. Ilhan C. Kaisha A. Biswas P. Tikhonov A. Murtagh O. Shvets I.
24 February 2023American Chemical Society
ACS Applied Nano Materials
2023#6Issue 42917 - 2927 pp.
The ability of VO2 to undergo semiconductor-to-metal phase transition (SMT) upon heating makes it a very attractive material for uncooled bolometers. The SMT of VO2 represents a large temperature coefficient of resistance, which is an important parameter for the development of highly responsive microbolometers. However, other characteristics of the SMT of VO2 such as its high transition temperature (341.2 K), the sharpness of the transition, its hysteresis, and the high room temperature resistivity limit the performance of this material in microbolometers. In this work, we grow a high-quality epitaxial ultrathin film VO2 on c-plane Al2O3 by pulsed laser deposition. The low deposition temperature and tuning the oxygen partial pressure during the growth process enable control over the grain size and oxygen vacancy concentration. This allowed controlling the SMT parameters of the samples. In particular, we show that the high density of grain boundaries associated with nanosized grains suppresses the thermal hysteresis of the SMT. Simultaneous control over the density of oxygen vacancies and the size of grains enables the adjustment of the temperature coefficient of resistance, room temperature resistivity, SMT temperature, sharpness, and thermal hysteresis toward suitable values for the fabrication of efficient VO2-based uncooled bolometers. Compared with other VO2 fabrication methods, this approach can be viewed as a simpler alternative for VO2 fabrication with favorable properties for practical bolometer applications.
defects , epitaxial growth , grain size , hysteresis , temperature coefficient of resistance , vanadium dioxide
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School of Physics, Trinity College Dublin, College Green, Dublin 2, Dublin, D02 PN40, Ireland
Centre for Research on Adaptive Nanostructures and Nanodevices, Trinity College Dublin, 43 Pearse St, Dublin, D02 W085, Ireland
Physics Department, School of Sciences and Humanities, Nazarbayev University, Qabanbay Batyr Ave 53, Astana, 010000, Kazakhstan
School of Chemistry, Trinity College Dublin, College Green, Dublin 2, Dublin, D02 PN40, Ireland
School of Physics
Centre for Research on Adaptive Nanostructures and Nanodevices
Physics Department
School of Chemistry
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