Synergic effects of incorporating black phosphorus for interfacial engineering in perovskite solar cells
Aidarkhanov D. Yelzhanova Z. Ren Z. Nigmetova G. Lau S.P. Balanay M.P. Hu H. Surya C. Djurišić A.B. Ng A.
December 2023Elsevier B.V.
Surfaces and Interfaces
2023#43
Continuous breakthroughs in power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs) have been achieved through advances in interfacial engineering. Black phosphorus (BP), an emerging class of semiconducting materials possessing unique characteristics and good electrical properties, has been applied in various modern optical and electronic devices showing promising functions. In this work, BP nanoflakes prepared by liquid-phase exfoliation are applied at the interface between SnO2 electron transport layer (ETL) and the multi-cation mixed halide perovskite active layer. The temporal stability of perovskite crystallized on BP is substantially improved. The champion device with a PCE of 20.3 % with negligible hysteresis is obtained by incorporating BP nanoflakes. Systematic characterizations reveal that BP nanoflakes synergistically optimize critical parameters at the SnO2/perovskite interface through combined effects of reducing surface roughness for better perovskite crystallization, lowering defect density as well as enhancing carrier transport. Inserting BP nanoflakes between the ETL and perovskite improves the carrier transport efficiency while maintaining high light transmittance to the perovskite absorber layer. These experimental findings demonstrate that interfacial engineering using BP nanoflakes provides a straightforward and effective approach for improving PSC performance.
Black phosphorus , Film quality , Interfacial engineering , Perovskite solar cell
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Department of Electrical and Computer Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Astana, Kazakhstan
Department of Electrical and Electronic Engineering, The Hong Kong Polytechnic University, Hong Kong SAR, Hung Hom, Hong Kong
Department of Chemical and Materials Engineering, School of Engineering and Digital Sciences, Nazarbayev University, Astana, 010000, Kazakhstan
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, Hung Hom, Hong Kong
Department of Chemistry, School of Sciences and Humanities, Nazarbayev University, Astana, 010000, Kazakhstan
Hoffmann Institute of Advanced Materials Postdoctoral Innovation Practice Base Shenzhen Polytechnic Nanshan District, Shenzhen, 518055, China
Innovation and Technology Commission, Central Government Offices, 2 Tin Mei Avenue, Hong Kong, Hong Kong
Department of Physics, The University of Hong Kong, Hong Kong, Pokfulam, Hong Kong
Department of Electrical and Computer Engineering
Department of Electrical and Electronic Engineering
Department of Chemical and Materials Engineering
Department of Applied Physics
Department of Chemistry
Hoffmann Institute of Advanced Materials Postdoctoral Innovation Practice Base Shenzhen Polytechnic Nanshan District
Innovation and Technology Commission
Department of Physics
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